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The SMMUN2116LT1G is a single PNP Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of two resistors with the transistor die within an SOT-23-3 surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a typical input resistance of 4.7 kOhms, a minimum DC current gain (hFE) of 160, and a power dissipation rating of 246 mW. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix LT1G against official datasheets to confirm package type and compliance status. Ensure the ordering part number matches the required configuration and polarity. Cross-reference manufacturer documentation for environmental certifications such as RoHS and halogen-free status before procurement.
Select this component when a PNP BRT with a 4.7 kOhm base resistor is required. Compare the 100 mA current rating and 50 V breakdown voltage against circuit demands. Evaluate the SOT-23-3 footprint constraints and thermal dissipation capabilities relative to the application's power budget.
This component belongs to the MMUN2116L series of digital transistors. It shares functional characteristics with other members of the family but differs in specific resistor values or packaging variants. The 'S' prefix typically denotes specific automotive or specialized qualification standards within the manufacturer's portfolio.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative BRTs based on matching VCEO, IC ratings, and internal resistor ratios.