SMMUN2211LT1G

Overview

The SMMUN2211LT1G is a Bias Resistor Transistor (BRT) manufactured by onsemi, featuring an integrated NPN transistor and monolithic bias network. It operates with a maximum collector-emitter voltage of 50 V and supports continuous collector currents up to 100 mA. The device incorporates typical input resistors of 10 kOhms with a resistance ratio of 1. Packaged in the compact SOT-363 surface-mount format, it ensures reliable performance across an operating temperature range from -55°C to +150°C.

Feature Summary

• Integrates a single NPN transistor with a dual-resistor bias network to reduce external component count.
• Provides simplified circuit design through built-in base and base-emitter resistors.
• Offers high thermal stability suitable for demanding industrial environments.

Applications

• General-purpose switching applications
• Driver circuits for logic interfaces
• Level shifting between different voltage domains

Procurement Notes

Verify the specific package designation against official documentation, as standard MMUN2211LT1G variants typically utilize SOT-23-3 packaging. Confirm that the SOT-363 configuration matches the intended board layout requirements before finalizing procurement decisions.

Selection Notes

Select this component when space constraints require a pre-biased solution in a dual-supershape package. Ensure the 50V voltage rating and 100mA current capacity align with the target application's electrical demands.

Part Context

This part belongs to the MMUN2211L series of digital transistors designed to replace discrete resistor networks. It consolidates multiple components into a single semiconductor die to improve reliability and assembly efficiency.

Replacement Considerations

Standard equivalents include the MMUN2211LT1G, though pinout compatibility must be verified due to potential package differences between SOT-23-3 and SOT-363 configurations.