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The SMMUN2211LT3G is an NPN Digital Transistor (BRT) manufactured by onsemi, designed to replace a single device and its external resistor bias network. It integrates a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The component features a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 V. It utilizes the SOT-23-3 surface-mount package and complies with AEC-Q100 automotive qualification standards.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure that the selected variant matches the required automotive qualification level and RoHS compliance status for the intended application environment.
Select this component when a compact solution for NPN switching with integrated biasing is required. Confirm that the 50 V collector-emitter voltage and 100 mA current ratings exceed the circuit's maximum operating conditions. Verify compatibility with the SOT-23-3 footprint during PCB layout.
This part belongs to the MMUN2211L series of Digital Transistors from onsemi. These devices are engineered to simplify circuit design by combining a transistor with its necessary bias resistors into a single semiconductor die, reducing board space and assembly complexity compared to discrete solutions.
Direct substitutes include MUN2211LT1G and MMUN2211LT1G. Verify pinout compatibility and electrical parameters before substitution.