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The SMMUN2213LT1G is an NPN Digital Transistor (BRT) in a SOT-23 package, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. It replaces discrete components to reduce board space and system cost. Key electrical parameters at 25°C include a collector-emitter breakdown voltage of 50 Vdc, continuous collector current of 100 mAdc, and input forward voltage of 40 Vdc. The typical DC current gain is 140 at IC=5.0 mA, VCE=10 V. Input resistors R1 and R2 are typically 47 kΩ each, with a ratio of 1.0.
Verify the specific ordering suffix and marking code against the official onsemi datasheet DTC144E/D to ensure correct device identification. Confirm that the SOT-23 package style matches the required pinout configuration. Check for any discontinuation notices or alternative recommendations from the manufacturer before finalizing procurement decisions.
Select this component when a compact NPN switch with integrated biasing is required. Ensure the maximum ratings, particularly collector-base and collector-emitter voltages, exceed the application's peak operating conditions. Verify thermal dissipation capabilities relative to the ambient temperature and PCB copper trace area to maintain reliability within the specified junction temperature range.
This part belongs to the MUN2213 series of Bias Resistor Transistors documented in publication DTC144E/D. It shares functional characteristics with related parts like MMUN2213LT1G and SMUN2213T1G but differs in packaging and shipping quantities. The SMMUN2213LT1G specifically denotes the SOT-23 package variant with tape and reel shipping options.
Direct substitutes include MMUN2213LT1G and SMUN2213T1G, which share identical electrical characteristics and pinouts but may differ in packaging style or shipping quantity. Verify pin compatibility and thermal performance before substitution.