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The SMMUN2213LT3G is an NPN Bias Resistor Transistor (BRT) from onsemi, featuring a monolithic bias network with R1 = 47 kΩ and R2 = 47 kΩ. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device provides a minimum DC current gain (hFE) of 80 at 5.0 mA and 10 V. Electrical characteristics include a collector-base cutoff current of 100 nAdc and a saturation voltage of 0.25 Vdc at 10 mA. Thermal dissipation reaches 246 mW at 25°C in the SOT-23 package.
Verify the specific ordering suffix 'LT3G' against the manufacturer's official documentation to confirm the exact shipping quantity and tape-and-reel specifications. Confirm that the SOT-23 package style matches the required pinout configuration for the target PCB layout. Ensure compliance with RoHS and halogen-free requirements if applicable to the assembly process.
Select this component when a compact NPN solution with integrated 47 kΩ base and emitter resistors is required. Verify that the 50 V collector-emitter voltage rating meets the system's maximum operating conditions. Check the thermal derating curves to ensure adequate heat dissipation for the intended ambient temperature range and power load.
This part belongs to the MUN2213 series of digital transistors manufactured by onsemi. It is functionally equivalent to other BRTs in the DTC144E family but packaged specifically in the SOT-23 form factor. The series is designed to simplify biasing networks in low-power electronic designs.
Direct substitutes include MMUN2213LT1G and SMUN2213T1G, which share identical electrical characteristics but differ in shipping quantities or automotive qualification prefixes. Verify package compatibility before substitution.