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The SMMUN2215LT1G is a single NPN digital transistor featuring built-in bias resistors, manufactured by onsemi. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device incorporates an internal base resistor (R1) of 10 kOhms and an emitter resistor (R2) of 47 kOhms, resulting in a specific bias ratio. Packaged in a surface-mount SOT-23-3 (TO-236AB) configuration, it offers a power dissipation rating of 246 mW. The component supports an operating temperature range from -55°C to +150°C and meets AEC-Q100 automotive qualification standards.
Verify the complete part number including the LT1G suffix to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Check for any recent Product Change Notifications that may affect pinout or material composition before finalizing procurement orders.
Select this component when a single NPN switch with fixed 10k/47k bias resistance is required. Ensure the 50V voltage rating and 100mA current capacity exceed the application's peak demands. Consider the SOT-23-3 thermal performance and PCB layout constraints for adequate heat dissipation under continuous load conditions.
This part belongs to the MMUN2215L series of pre-biased transistors from onsemi. It serves as a compact alternative to discrete resistor-transistor networks, reducing board space and assembly complexity. The series is widely used in consumer electronics and industrial control panels where reliable switching with minimal external components is essential.
Direct substitutes include other NPN digital transistors with similar 10k/47k bias ratios and SOT-23-3 packages, such as the MUN2215 or DTC114EE variants. Verify electrical parameters like hFE and saturation voltage match the original design requirements before substitution.