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The SMMUN2216LT1G is an NPN Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device features a typical input resistance of 4.7 kOhms and a DC current gain of 350 at 5.0 mA and 10 V. Packaged in a lead-free SOT-23 case, it functions across a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm that the requested part matches the exact marking code 'A8F' for the SOT-23 variant. Ensure compliance with environmental directives such as RoHS and halogen-free requirements before finalizing procurement specifications.
Select this component when a compact NPN digital transistor solution is needed with integrated biasing. Verify that the 4.7 kOhm internal resistor values align with the target circuit's drive requirements. Consider the SOT-23 package dimensions and thermal dissipation characteristics relative to the available board space and operating temperature conditions.
This component belongs to the MUN2216 family of digital transistors produced by onsemi. It shares functional similarities with other BRT devices like the MMUN2216LT1G but differs in specific packaging or shipping configurations. The datasheet covers multiple variants including MUN2216T1G and DTC143TE, all utilizing the same underlying semiconductor structure.
Direct substitutes include MMUN2216LT1G and SMUN2216T1G, which share identical electrical characteristics and pinouts. Cross-reference with industry equivalents such as DTC143TE for alternative sourcing options while verifying package compatibility and marking codes.