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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The SMMUN2216LT3G is an NPN Bias Resistor Transistor (BRT) from onsemi, featuring a monolithic bias network with R1 = 4.7 kΩ and R2 = 4.7 kΩ. It operates within a collector-emitter voltage of 50 Vdc and supports continuous collector current up to 100 mAdc. The device is housed in a lead-free SOT-23 package (Case 318). Electrical characteristics include a minimum DC current gain of 160 at 5 mA and a maximum collector-emitter saturation voltage of 0.25 Vdc at 10 mA. Thermal dissipation reaches 246 mW at 25°C ambient temperature.
Feature Summary
- Integrates a single transistor with a monolithic bias resistor network to replace discrete components
- Reduces board space and component count by eliminating external resistors
- Simplifies circuit design through built-in base and base-emitter resistors
Applications
- Replacing discrete transistor and resistor bias networks
- Switching applications requiring simplified drive circuits
- Automotive systems utilizing AEC-Q101 qualified variants
Procurement Notes
Verify the specific ordering suffix 'LT3G' against official documentation to confirm the SOT-23 package and 10,000-unit tape and reel shipping configuration. Ensure compatibility with Pb-Free manufacturing standards and RoHS compliance requirements for the target assembly process.
Selection Notes
Select this BRT when a 4.7 kΩ/4.7 kΩ resistor ratio is required for NPN switching. Consider the SOT-23 package dimensions and thermal resistance values if operating near maximum power dissipation limits. Verify that the 50 V collector-emitter rating meets the circuit's voltage requirements.
Part Context
This component belongs to the MUN2216 series of digital transistors manufactured by onsemi. It shares electrical specifications with other package variants such as MMUN2216LT1G and SMUN2216T1G, differing primarily in physical footprint and shipping quantities. The series is designed to consolidate discrete biasing elements into a single integrated device.
Replacement Considerations
Direct substitutes include MMUN2216LT1G and SMUN2216T1G, which share identical electrical parameters but differ in packaging or shipping format. Cross-brand equivalents require verification of matching resistor ratios and voltage ratings.
