ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
Download product information
Overview
The SMMUN2233LT1G is an NPN Bias Resistor Transistor (BRT) from onsemi, housed in a surface-mount SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1 = 4.7 kΩ) and a base-emitter resistor (R2 = 47 kΩ). Key electrical ratings include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and power dissipation of 246 mW at 25°C. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components.
- Reduces board space and component count by eliminating external bias resistors.
- Simplifies circuit design through integrated base and base-emitter resistors.
Applications
- General-purpose switching applications
- Driver circuits for logic interfaces
- Automotive electronics requiring AEC-Q101 qualification
Procurement Notes
Verify the specific ordering suffix 'LT1G' corresponds to the SOT-23 package and tape-and-reel shipping configuration. Confirm that the 'S' prefix variant meets automotive site and control change requirements if AEC-Q101 qualification is necessary for the target application.
Selection Notes
Select this component when a compact NPN switch with fixed biasing is required. Ensure the 4.7 kΩ input resistance matches the driving source impedance. Verify that the 50 V collector-emitter breakdown voltage exceeds the maximum circuit voltage under all operating conditions.
Part Context
This part belongs to the MUN2233L digital transistor family, which includes variants like MMUN2233LT1G and MUN2233T1G. These devices share the same internal R1/R2 ratio but differ in packaging and shipping options. The SMMUN2233LT1G specifically denotes the SOT-23 form factor.
Replacement Considerations
Direct pin-compatible substitutes within the same family include MMUN2233LT1G. Other BRTs with similar R1/R2 ratios may require schematic verification before substitution.
FAQ
What are the values of the integrated resistors?
The device contains a series base resistor (R1) of 4.7 kΩ and a base-emitter resistor (R2) of 47 kΩ.
Is this component qualified for automotive applications?
Yes, versions with the 'S' or 'NSV' prefix are AEC-Q101 qualified and PPAP capable.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
