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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The SMMUN2234LT1G is an NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor within a SOT-23-3 package. The device features a collector-emitter voltage rating of 50 Vdc, a continuous collector current of 100 mA, and a power dissipation capacity of 225 mW. Internal resistances are specified as R1 = 22 kΩ and R2 = 47 kΩ. It operates within a temperature range of -55°C to +150°C and meets AEC-Q101 qualification standards for automotive applications.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network comprising two resistors to replace discrete components.
- AEC-Q101 qualified and PPAP capable, designed for automotive and other applications requiring unique site and control change requirements.
- Reduces board space and component count while simplifying circuit design.
Applications
- Automotive electronic systems requiring qualified semiconductor components
- General-purpose switching circuits utilizing pre-biased logic interfaces
- Applications necessitating reduced printed circuit board area through component integration
Procurement Notes
Verify the specific suffix LT1G against official datasheets to confirm the presence of AEC-Q101 automotive qualification and PPAP capability. Confirm that the internal resistance values match the required 22 kΩ and 47 kΩ specifications for the target circuit design before procurement.
Selection Notes
Select this component when a compact NPN solution with integrated biasing is required for high-reliability environments. Ensure the 50 V collector-emitter voltage and 100 mA current ratings exceed the maximum operational loads. Verify thermal management requirements given the 225 mW power dissipation limit in the SOT-23-3 package.
Part Context
This part belongs to the MUN2234L family of digital transistors. The 'SM' prefix typically denotes specific automotive-grade variants within the broader BRT portfolio. It serves as a direct replacement for discrete transistor-resistor networks in signal processing and switching applications.
Replacement Considerations
Direct substitutes include the MMUN2234LT1G if automotive qualification is not strictly required, or other MUN2234L variants with identical resistance ratios. Verify pinout compatibility and electrical limits before substitution.
