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The SMMUN2238LT1G is a Bias Resistor Transistor (BRT) manufactured by onsemi, featuring an NPN transistor integrated with a monolithic bias resistor network. It is housed in a surface-mount SOT-23 package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a typical input resistance of 10 kOhms and a power dissipation rating of 246 mW. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix LT1G against the official datasheet to confirm packaging details and manufacturing site compliance. Ensure the selected variant meets all required environmental standards and RoHS directives before finalizing procurement specifications.
Select this component when a compact NPN solution with integrated biasing is required. Confirm that the 10 kOhm internal resistance aligns with the target drive current and logic levels. Verify thermal management requirements given the 246 mW power dissipation limit in the SOT-23 package.
This part belongs to the MMUN22xxL series of digital transistors from onsemi. These devices are designed to replace individual transistors and external resistors, offering a standardized solution for biasing needs in consumer and industrial electronics while maintaining automotive qualification standards.
Direct substitutes include other NPN BRTs with similar 50V ratings and 10k/10k resistor ratios, such as the MUN2238T1G or equivalent parts from other manufacturers like ROHM or Diodes Inc., provided pinouts and electrical characteristics match.