ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-Channel -20V Low Noise
- Series：SMP152
- Mfr：InterFET
- Package：Strip
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：20 V
- Current - Drain (Idss) @ Vds (Vgs=0)：14 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1.2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：15pF @ 10V
- Resistance - RDS(On)：42 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
Download product information
Overview
The InterFET SMP152 is an N-channel JFET in a SOT-23 surface-mount package. It features a -20V gate-to-source breakdown voltage and a typical forward transconductance of 30mS at 1kHz. The device exhibits low noise with a typical input capacitance of 15pF and reverse transfer capacitance of 4pF at 1MHz. Gate leakage is typically 750fA at 10V, while the drain-to-source saturation current ranges from 5mA to 20mA.
Feature Summary
- Utilizes proprietary InterFET N0132L geometry for high radiation tolerance
- Provides low noise performance suitable for sensitive signal processing
- Offers high gain characteristics with minimal gate leakage currents
Applications
- Radar systems and satellite communications
- Hydrophone preamplifiers and medical imaging equipment
- Low-noise audio filters and electret microphone circuits
Procurement Notes
Verify the specific ordering suffix to confirm packaging format, as bulk and tape-and-reel options exist for this component. Confirm RoHS compliance status and check for custom binning requirements if specific electrical parameters are needed for your design. Ensure ESD handling protocols are followed during assembly.
Selection Notes
Select the SMP152 when a surface-mount N-channel JFET with low noise and high radiation hardness is required. Compare its 30mS transconductance against legacy equivalents like the 2SK152 or 2N6451. Consider the SOT-23 footprint constraints and verify that the -20V breakdown rating meets your circuit's voltage headroom needs.
Part Context
This component belongs to the IFN152 family of N-channel JFETs manufactured by InterFET. It serves as a direct replacement for several industry-standard Japanese JFETs. The product line emphasizes low leakage and high reliability through specialized semiconductor processes.
Replacement Considerations
- 2SK152
- 2SK170
- 2N6451
- 2N6452
- 2N3972
- 2N4393
- MMBF4393L
FAQ
Are the source and drain pins interchangeable on the SMP152?
Yes, the source and drain pins are interchangeable on the SMP152.
What is the typical gate leakage current for this device?
The typical gate leakage current is 750fA at room temperature with 10V applied.
Does the SMP152 offer radiation tolerance?
Yes, the device features high radiation tolerance due to InterFET's proprietary materials and processes.
