SMP152TR

Overview

The InterFET SMP152TR is an N-Channel JFET in a surface-mount SOT-23 package. It features a -20V gate-to-source breakdown voltage, a typical forward transconductance of 30mS, and a typical input capacitance of 15pF at 1MHz. The device exhibits low noise characteristics with a typical value of 1.0 nV/√Hz and extremely low gate leakage of 750fA at 10V. Continuous power dissipation is rated at 350mW, with an operating junction temperature range extending to 150°C.

Feature Summary

• Utilizes proprietary N0132L geometry for high radiation tolerance and minimal leakage
• Provides high gain with typical forward transconductance of 30mS
• Delivers ultra-low noise performance suitable for sensitive signal processing
• Offers flexible packaging options including tape and reel configurations

Applications

• Low-noise audio amplifiers and tone control circuits
• Radar and satellite communication systems
• Medical imaging equipment and ultrasound preamplifiers
• Precision voltage regulators and oscillators

Procurement Notes

Verify the specific ordering suffix to confirm the packaging format, as the TR designation indicates tape and reel supply. Confirm that the SOT-23 package variant meets your thermal management requirements given the 350mW continuous power dissipation limit. Ensure compatibility with standard SMD assembly processes and validate ESD handling protocols consistent with Class 3B HBM ratings during installation.

Selection Notes

Select this component when replacing Japanese 2SK152 or similar industry-standard JFETs requiring superior radiation hardness. Consider the SMP152TR for designs demanding low input capacitance and high transconductance in compact surface-mount layouts. Evaluate the trade-off between the -20V breakdown rating and circuit voltage headroom. Verify that the 15mA typical saturation current aligns with the required biasing conditions for the target application.

Part Context

The SMP152TR belongs to the IFN152 product family from InterFET Corporation. It serves as a direct surface-mount equivalent to through-hole variants like the IFN152 (TO-18) and PN152 (TO-92). The part is designed to cross-reference multiple legacy components while offering enhanced performance metrics such as lower noise and higher radiation tolerance compared to standard silicon JFETs.

Replacement Considerations

• 2SK152
• 2SK170
• 2N6451
• 2N6452
• 2N3972
• 2N4393

FAQ

Is the source and drain interchangeable in the SMP152TR?

Yes, the datasheet notes that the source and drain pins are interchangeable for the SMP152TR.

What is the typical gate leakage current for this device?

The typical gate leakage current is 750fA at a gate-to-source voltage of 10V.

Does the SMP152TR offer radiation tolerance?

Yes, the device utilizes InterFET's proprietary N0132L geometry which results in high radiation tolerance.