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Product Detailed Parameters
- Description：JFET N-Channel -40V Low Ciss
- Series：SMP4117
- Mfr：InterFET
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：60 µA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1.2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：1.8pF @ 10V
- Resistance - RDS(On)：12.5 kOhms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The SMP4117TR is an N-Channel JFET from InterFET, packaged in SOT23 and supplied on a tape and reel. It features low gate leakage of 120fA typical at 20V and low input capacitance (CISS) of 1.8pF typical. The device offers high radiation tolerance and complies with RoHS, REACH, and CMR standards. Key electrical parameters include a gate-to-source breakdown voltage (BVGSS) of -40V minimum, a gate reverse current (IGSS) of -10pA maximum at -20V, and a cutoff voltage (VGS(OFF)) ranging from -0.6V to -1.8V. Drain saturation current (IDSS) ranges from 0.03mA to 0.09mA, while forward transconductance (GFS) spans 70μS to 210μS.
Feature Summary
- Utilizes proprietary InterFET N0001H geometry for exceptionally high radiation tolerance.
- Provides ultra-high input impedance with minimal gate leakage currents.
- Supports femtoampere diode applications through specific part connections.
- Compliant with RoHS, REACH, and CMR environmental regulations.
Applications
- Buffers and signal mixers
- Femtoampere diodes
- Radar and communications systems
- Satellite equipment
- Medical imaging systems and ultrasound monitors
Procurement Notes
Verify the exact ordering suffix against official InterFET documentation to confirm packaging specifications. Confirm that the specified tape and reel dimensions align with automated assembly requirements. Ensure compliance with relevant industry standards such as RoHS and REACH before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring ultra-high input impedance and low noise characteristics. Consider the SOT23 package for surface-mount applications where space is limited. Evaluate the specific binning options available for customized test requirements to match precise electrical performance needs.
Part Context
This part belongs to the 2N4117/A series of N-Channel JFETs designed for mid to high-frequency applications. It serves as a direct cross-reference for industry-standard parts like SST4117 and MMBF4117. The product line includes various package options including through-hole and bare die configurations.
Replacement Considerations
Direct replacements include SST4117, SST4118, SST4119, MMBF4117, MMBF4118, MMBF4119, 2N4117, 2N4118, 2N4119, and VCR7N.
FAQ
What is the typical gate leakage current for the SMP4117TR?
The typical gate leakage current is 120fA at room temperature when measured at 20V.
Is the SMP4117TR suitable for military applications?
Yes, the device offers high radiation tolerance and is suitable for military and aerospace applications such as radar and satellites.
What is the maximum gate-to-source breakdown voltage?
The minimum gate-to-source breakdown voltage (BVGSS) is -40V under specified conditions.
