ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET P-Channel 30V Low Noise
- Series：SMP5115
- Mfr：InterFET
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：25 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：12pF @ 10V
- Resistance - RDS(On)：80 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
Download product information
Overview
The SMP5115TR is a P-Channel JFET from InterFET, utilizing the P0099F geometry and packaged in SOT23. It features a Gate to Source Breakdown Voltage of 30V and a Drain to Source Saturation Current (IDSS) ranging from -15mA to -60mA. The device exhibits a Gate to Source Cutoff Voltage between 3V and 6V. Static Drain to Source ON Resistance is specified at 75Ω to 150Ω. Input Capacitance is typically 25pF, with Reverse Transfer Capacitance at 7pF. Continuous Power Dissipation is 500mW, operating within a junction temperature range of -55°C to 125°C.
Feature Summary
- Utilizes InterFET P0099F geometry for optimized performance
- Designed specifically for chopper and analog switch applications
- Features low on-resistance and typical noise of 8 nV/√Hz
Applications
- Analog switches
- Choppers
Procurement Notes
Verify that the specific part number matches the required binning options for IDSS and VGS(off), as custom parts are available. Confirm the tape and reel specifications align with manufacturing requirements, noting maximum quantities per reel size. Ensure compliance with RoHS standards and validate application suitability under all field use conditions prior to deployment.
Selection Notes
Select this component when a P-Channel JFET with 30V breakdown voltage and SOT23 surface mount packaging is required. Consider the IDSS range of -15mA to -60mA for current handling needs. Evaluate the 75Ω to 150Ω ON resistance against circuit loss requirements. Verify thermal management capabilities given the 500mW power dissipation limit and -55°C to 125°C operating range.
Part Context
This model belongs to the 2N5114, 2N5115, and 2N5116 family of P-Channel JFETs manufactured by InterFET. The SMP5115 variant specifically targets designs requiring moderate saturation current compared to the 2N5114 and 2N5116 counterparts. The TR suffix indicates the device is supplied in tape and reel format for automated assembly processes.
Replacement Considerations
Direct substitutes include SMP5114TR and SMP5116TR from the same manufacturer, which share identical packaging but differ in electrical parameters such as IDSS and VGS(off). Cross-manufacturer replacements require verification of pinout compatibility and matching electrical characteristics.
FAQ
What is the package type for the SMP5115TR?
The SMP5115TR uses an SOT23 surface mount package.
What is the Gate to Source Breakdown Voltage?
The Gate to Source Breakdown Voltage is 30V.
Is the device suitable for military applications?
While the TO-18 package version is hermetically sealed and suitable for military applications, the SMP5115TR is in an SOT23 plastic package; verify specific environmental ratings for harsh conditions.
