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Product Detailed Parameters
- Description：JFET P-Channel 30V Low Noise
- Series：SMP5116
- Mfr：InterFET
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：10 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：12pF @ 10V
- Resistance - RDS(On)：110 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The SMP5116TR is a P-channel JFET in the 2N5114-5-6 series, manufactured by InterFET using P0099F geometry. It features a SOT23 surface-mount package and operates with a gate-to-source breakdown voltage of 30V. The device exhibits a drain-to-source saturation current range of -5mA to -25mA and a gate-to-source cutoff voltage between 1V and 4V. Static on-resistance is specified from 75Ω to 150Ω at 1kHz. Input capacitance ranges from 25pF to 27pF, while reverse transfer capacitance is 7pF. Continuous power dissipation is 500mW, with an operating junction temperature range of -55°C to 125°C.
Feature Summary
- Utilizes InterFET P0099F geometry for optimized performance characteristics.
- Designed specifically for low-noise applications with typical noise figures of 8 nV/√Hz.
- Provides low on-resistance suitable for efficient analog switching operations.
Applications
- Analog switches
- Chopper circuits
Procurement Notes
Verify that the specific ordering suffix matches the required tape and reel configuration. Confirm the package type corresponds to the SOT23 form factor. Ensure compliance with RoHS standards if applicable to the end application. Validate electrical parameters against the official datasheet specifications before integration into the design.
Selection Notes
Select this component when a P-channel JFET with a 30V rating and SOT23 packaging is required. Consider the specific IDSS and VGS(off) bins necessary for the circuit's biasing requirements. Evaluate the thermal management needs based on the 500mW power dissipation limit. Compare noise specifications against other available options to ensure signal integrity.
Part Context
This part belongs to the 2N5114, 2N5115, and 2N5116 family of P-channel JFETs. The series offers multiple package options including through-hole TO-18, TO-92, and surface-mount SOT23. The SMP5116 variant specifically targets designs requiring lower saturation currents compared to the 2N5114 and 2N5115 counterparts within the same product line.
Replacement Considerations
Direct substitutes include the 2N5114 and 2N5115 variants from InterFET, provided the pinout and electrical tolerances align with the design requirements. Other manufacturers' P-channel JFETs may require verification of pin compatibility and parameter matching.
FAQ
What is the maximum gate-to-source breakdown voltage for the SMP5116TR?
The maximum gate-to-source breakdown voltage (BVGSS) is 30V.
Does the SMP5116TR come in a bulk or tape and reel package?
The SMP5116TR designation indicates it is supplied in a tape and reel format, whereas the non-TR version is available in bulk.
What is the typical noise figure for this JFET?
The typical noise figure is 8 nV/√Hz.
