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Product Detailed Parameters
- Description：JFET P-Channel 30V Low Noise
- Series：SMPJ177
- Mfr：InterFET
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1.5 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：12pF @ 0V
- Resistance - RDS(On)：130 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The SMPJ177TR is a P-channel JFET from InterFET, utilizing the proprietary P0099F geometry. It features low noise (2.0 nV/√Hz typical) and high gain (10mS typical). The device has a gate-to-source breakdown voltage of 30V and a cutoff voltage range of 0.8V to 2.25V. Typical drain saturation current is -1.5mA to -20mA. It offers exceptionally high radiation tolerance and RoHS compliance.
Feature Summary
- Utilizes InterFET P0099F geometry for high radiation tolerance
- Provides low noise performance with 2.0 nV/√Hz typical input noise
- Features extremely low gate leakage of 2.5pA typical at 10V
- Offers high transconductance gain of 10mS typical
Applications
- High-gain switching and commutator circuits
- Chopper applications requiring low-level power supplies
- Radar and satellite communications systems
- Medical imaging and ultrasound equipment
- Hydrophone preamplifiers
Procurement Notes
Verify that the specific order matches the SMPJ177TR designation for SOT-23 packaging in tape and reel format. Confirm the required quantity aligns with the maximum 3,000 pieces per 7-inch reel or 9,000 pieces per 13-inch reel specifications provided by the manufacturer. Ensure compatibility with standard ESD shipping materials for bulk product handling.
Selection Notes
Select this component when low gate leakage and high radiation tolerance are critical requirements. The J177 variant is specifically suited for low-level power supply applications due to its lower cutoff voltage compared to the J176. Verify that the 30V breakdown rating meets the circuit's maximum voltage constraints before implementation.
Part Context
This part belongs to the J176/J177 family of P-channel JFETs designed for high-performance analog and switching applications. It serves as a direct replacement for industry standards such as SST177 and 2N5116. The device is available in multiple package options including through-hole TO-92, surface mount SOT-23, and bare die configurations.
Replacement Considerations
Officially documented cross-references include SST177, 2N5116, SST270, and SST271. Similar parts within the InterFET portfolio include 2N5019, 2N5114, 2N5115, P1086, P1087, J270, J271, VCR3P, IFN3993, IFN3994, U304, U305, and U306.
