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The InterFET SMPJ232TR is an N-Channel Silicon Junction Field-Effect Transistor (JFET) housed in a surface-mount SOT23 package. It features a -40V Gate to Source Breakdown Voltage and a Drain to Source Saturation Current of 5mA typical. The device exhibits a Gate to Source Cutoff Voltage ranging from -3V to -6V and a Forward Transconductance of 2500μS typical. Designed for sensitive amplifier stages, it offers low noise characteristics with a typical input capacitance of 4pF.
Verify the specific ordering suffix required for your manufacturing process. The SMPJ232TR designation indicates the SOT23 package configuration supplied in tape and reel format. Confirm that the selected packaging aligns with your automated assembly equipment specifications before finalizing procurement orders.
Select this component when designing mid-frequency circuits requiring ultrahigh impedance pre-amplification. The J232 is appropriate for sensitive amplifier stages where low gate leakage and minimal noise are critical. Ensure the design accommodates the specified maximum ratings for voltage and power dissipation under all operating conditions.
The SMPJ232TR belongs to the J232 family of N-Channel JFETs manufactured by InterFET. This series includes various packaging options such as TO-92 through-hole, SOT23 surface mount, and chip variants like COT and CFT waffle packs. The product line targets applications demanding high reliability and precise electrical characteristics for analog signal processing.
Public confirmed substitute part numbers are not available in the provided documentation.