SMS7630-061

RF Diode Overview

The SMS7630-061 is a surface-mount, zero bias silicon Schottky detector diode in an ultra-miniature 0201 footprint. It features extremely low barrier height and parasitic impedance (CP < 0.05 pF, LS < 0.2 nH), enabling operation above 26 GHz. Electrical specifications include a breakdown voltage of 1 V at 100 μA, total capacitance of 0.2 pF at 0.15 V reverse bias, and video resistance of 5000 Ω. Absolute maximum ratings specify a forward current of 50 mA, power dissipation of 75 mW, and operating temperature range from -65°C to +150°C.

RF Diode Feature Summary

• Zero bias P-type silicon Schottky design for sensitive video detection without external bias current
• Ultra-low parasitic impedance suitable for frequencies exceeding 26 GHz
• Ultra-miniature 0201 SMT package with MSL1 rating and 260 °C soldering compatibility

RF Diode Applications

• Sensitive RF and microwave detector circuits
• Sampling and mixer circuits
• High volume wireless systems
• WiFi and mobile devices
• Low-noise receivers for high sensitivity ID tags

RF Diode Procurement Notes

Verify the specific ordering suffix against Skyworks documentation to confirm packaging format and tape-and-reel dimensions. Confirm RoHS compliance status and halogen-free designation prior to procurement. Ensure ESD handling precautions are strictly followed during storage and assembly to prevent damage from charged device or human body model discharges.

RF Diode Selection Notes

Select this component when ultra-low junction capacitance and series inductance are critical for high-frequency detection above 26 GHz. The zero-bias characteristic eliminates the need for external bias currents, simplifying circuit design. Verify that the 0201 package dimensions fit the PCB layout constraints and that the 75 mW power dissipation rating meets the thermal requirements of the application environment.

RF Diode Part Context

The SMS7630-061 belongs to the Skyworks SMS7630 series of surface-mount Schottky detector diodes. This series utilizes silicon technology optimized for low barrier height and minimal parasitic effects. The 0201 package variant provides a compact form factor suitable for dense PCB layouts in modern wireless communication devices and high-frequency measurement equipment.

RF Diode Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.