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The SMUN2111T1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device features an input forward voltage rating of 40 Vdc and reverse voltage of 10 Vdc. Electrical characteristics include a minimum DC current gain (hFE) of 35 at 5.0 mA and 10 V, with a typical value of 60. The integrated resistor ratio (R1/R2) is typically 1.0, with R1 being 10 kOhms. Thermal dissipation in the SC-59 package reaches 230 mW at 25°C ambient temperature.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm that the selected variant meets all necessary automotive or industrial qualification standards if required for the target application environment.
Select this component when a compact PNP solution with integrated base biasing is needed. Ensure the required collector current does not exceed 100 mA and the voltage ratings align with the system's maximum operating limits. Consider thermal derating curves for high-temperature environments.
This part belongs to the MUN2111 series of digital transistors designed to simplify circuit layouts. It serves as a direct replacement for discrete NPN/PNP configurations requiring external bias resistors, offering a standardized footprint and consistent electrical performance across manufacturing batches.
SMUN2111T3G
Pin 1 is Base (Input), Pin 2 is Emitter (Ground), and Pin 3 is Collector (Output).
The device contains a series base resistor (R1) of 10 kOhms and a base-emitter resistor (R2) of 10 kOhms, resulting in a typical ratio of 1:1.
Yes, devices with the 'S' prefix (such as SMUN2111T1G) are AEC-Q101 qualified and PPAP capable for automotive use.