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The SMUN2111T3G is a Bias Resistor Transistor (BRT) from onsemi, featuring an integrated PNP transistor and monolithic bias network. It replaces discrete components with a single device in SC-59 packaging. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and input resistors R1 and R2 both at 10 kOhms. The device operates within a junction temperature range of -55 to +150 °C.
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm that the selected variant meets all necessary environmental compliance requirements for the intended application environment before finalizing procurement decisions.
Select this component when a compact solution for PNP switching is required without external biasing resistors. Ensure the 50 V collector-emitter voltage rating and 100 mA continuous current capacity align with the target circuit's operational limits and thermal dissipation requirements.
This part belongs to the MUN2111 family of digital transistors manufactured by onsemi. The family includes various packages such as SOT-23 and SC-70, offering flexibility in board layout while maintaining consistent electrical characteristics across the series for standardized design implementations.
Compatible substitutes include MMUN2111LT1G and MUN2111T1G. Verify pinout compatibility and thermal performance differences between the SC-59 and alternative packages before implementing any cross-package substitution in existing designs.