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The SMUN2112T1G is a single PNP digital transistor from onsemi, housed in an SC-59 (SOT-23) surface-mount package. It integrates a bipolar junction transistor with internal biasing resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical base resistor (R1) of 22 kOhms and an emitter resistor (R2) of 22 kOhms, resulting in a 1:1 resistance ratio. DC current gain (hFE) is specified at a minimum of 60. Power dissipation is rated at 338 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific ordering suffix when sourcing components. Suffixes such as 'G' indicate RoHS compliance, while others like 'T3' or 'T1G' denote different tape-and-reel packaging configurations. Confirm that the selected variant matches the required environmental standards and reel specifications for automated assembly processes.
Select this component for designs requiring a pre-biased PNP switch in a small footprint. Ensure the load current remains within the 100 mA limit and the voltage does not exceed 50 V. Consider the 22 kOhm input resistance for base drive calculations. Verify that the SC-59 package fits the available PCB real estate constraints.
This part belongs to the MUN2112 family of digital transistors. Variants such as MUN2112T1G and NSVMUN2112T1G share identical electrical characteristics but may differ in packaging or automotive qualification status. The SMUN2112T1G designation specifically refers to the standard commercial grade version in the SC-59 package.
Direct substitutes include MUN2112T1G and NSVMUN2112T1G, which share the same pinout and electrical specifications. Cross-brand equivalents with matching 50 V/100 mA ratings and 22 kOhm resistor ratios should be verified for package compatibility and hFE limits.