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The SMUN2113T1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The device features a typical input resistance of 47 kOhms and a typical resistor ratio of 1. It supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The component operates within a temperature range of -55°C to +150°C, has a minimum DC current gain (hFE) of 80, and is housed in an SC-59-3 surface-mount package.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and qualification status. Confirm that the SC-59-3 package dimensions align with target PCB footprints. Ensure thermal management strategies accommodate the specified power dissipation limits during operation.
Select this component when an NPN configuration with a 47 kOhm input resistance is required. Verify compatibility with logic levels driving the base terminal. Consider the AEC-Q100 qualification if the application involves automotive environments. Compare physical dimensions against available board space constraints before finalizing the design.
This part belongs to the MUN2113 series of digital transistors from onsemi. The series provides integrated solutions for replacing individual transistors and external biasing resistors. The SMUN2113T1G variant specifically denotes the NPN polarity version packaged in the compact SC-59 form factor suitable for surface mount technology.
The MMUN2113LT1G serves as a PNP counterpart within the same family but differs in polarity. Direct substitution requires verifying circuit topology compatibility between NPN and PNP configurations.