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The SMUN2211T3G is a Bias Resistor Transistor (BRT) manufactured by onsemi, featuring an integrated NPN bipolar junction transistor and monolithic bias network. It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes a typical base series resistor of 10 kOhms and a base-emitter resistor ratio of 1. Packaged in the SC-59-3 (SOT-23) surface-mount format, it dissipates up to 230 mW. The unit supports operation between -55°C and +150°C, ensuring reliability across industrial temperature ranges while minimizing external component requirements.
Verify the specific suffix T3G against the manufacturer's datasheet to confirm packaging details such as tape and reel specifications. Ensure compliance with RoHS directives and lead-free status requirements for the target assembly process. Cross-reference the SC-59 package dimensions with the PCB footprint library to prevent mounting errors during surface mount placement.
Select this component when a compact NPN switching solution with integrated biasing is required. The 10 kOhm input resistance suits standard logic levels. Compare the 100 mA current rating against load requirements. Verify that the SC-59 package fits the available board real estate. Consider thermal dissipation limits if operating near maximum ambient temperatures.
This part belongs to the MUN2211 family of digital transistors from onsemi. These devices are designed to simplify analog and digital circuit designs by combining a transistor with bias resistors. The family offers various resistor ratios to accommodate different drive conditions while maintaining a small form factor suitable for high-density electronics.
Publicly confirmed substitutes include MMUN2211LT1G and MUN2211LT1. Verify pinout compatibility and electrical parameters before substitution. Ensure the alternative part meets the same SC-59 package constraints and thermal ratings.