SMUN2212T1G

SMUN2212T1G

$0.16
  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-

SKU:38eadd7443d1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:230 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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SMUN2212T1G

Overview

The SMUN2212T1G is a single NPN Digital Transistor (BRT) manufactured by onsemi, housed in an SC-59 surface-mount package. It integrates a monolithic bias network consisting of two resistors: R1 and R2, both typically 22 kOhms with a ratio of 1. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 230 mW. The device features a minimum DC current gain (hFE) of 60 at 5 mA and 10 V, with a maximum saturation voltage of 250 mV at specific test conditions. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive applications.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias resistor network to simplify circuit design and reduce board space.
  • AEC-Q101 qualified for automotive applications, ensuring reliability under stringent industry standards.
  • RoHS compliant and Pb-free construction, supporting environmentally conscious manufacturing processes.

Applications

  • Automotive electronic systems requiring qualified pre-biased transistors.
  • General-purpose switching applications where simplified biasing networks are preferred.
  • Digital logic interface circuits utilizing NPN configuration.

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and AEC-Q101 automotive requirements if applicable to the target application. Cross-reference datasheet revision dates to confirm parameter consistency before finalizing procurement decisions.

Selection Notes

Select this component when a single NPN BJT with integrated 22 kOhm base and emitter resistors is required. The SC-59 package offers a compact footprint suitable for space-constrained designs. Consider the 50 V voltage rating and 100 mA current capacity to ensure adequate headroom for the intended load switching or signal amplification tasks.

Part Context

This part belongs to the MUN2212 series of Digital Transistors from onsemi. These devices are designed to replace discrete transistor-resistor combinations, offering reduced component count and assembly costs. The series includes variants with different resistor values and ratios, all sharing similar electrical characteristics and packaging options for consistent design integration.

Replacement Considerations

Direct substitutes may include other NPN BRTs with identical 22 kOhm/22 kOhm resistor values and SC-59 packaging. Verify pinout compatibility and electrical parameters such as VCEO and IC ratings. Alternative packages like SOT-23 may require schematic and PCB layout adjustments.

SMUN2212T1GSMUN2212T1G
$0.16
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