SMUN2213T1G

SMUN2213T1G

$0.17
  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-

SKU:7e75dfaf2de3 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:230 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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SMUN2213T1G

Overview

The SMUN2213T1G is a Bias Resistor Transistor (BRT) from onsemi, featuring an NPN transistor integrated with a monolithic bias resistor network. It replaces discrete components to simplify circuit design and reduce board space. The device operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. Electrical characteristics include a typical DC current gain of 140 at 5.0 mA and a saturation voltage of 0.25 Vdc at 10 mA. The unit incorporates a series base resistor of 47 kOhms and a base-emitter resistor of 47 kOhms, maintaining a ratio of 1.0. It functions reliably across a junction temperature range of -55°C to +150°C.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network consisting of two resistors to eliminate external component requirements.
  • Designed to simplify circuit design by reducing the overall component count and minimizing printed circuit board area usage.

Applications

  • General-purpose switching applications requiring simplified bias networks
  • Interface circuits for logic families needing level shifting or buffering
  • Driver stages in digital control systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Ensure compliance with RoHS standards and lead-free requirements as specified in the manufacturer's datasheet. Confirm that the selected variant meets all necessary automotive qualification criteria if applicable to the target application environment.

Selection Notes

Select this component when a compact solution for NPN switching with built-in biasing is required. Consider the thermal dissipation limits relative to ambient operating conditions. Evaluate the input resistance values against the driving source capabilities to ensure proper logic level interfacing and adequate base drive current for the intended load.

Part Context

This part belongs to the MUN2213 series of digital transistors manufactured by onsemi. It shares functional similarities with other BRT devices like the MUN2216T1G but differs in internal resistor values. The SC-59 package provides a small form factor suitable for surface-mount assembly in space-constrained electronic designs.

Replacement Considerations

Direct substitutes include MUN2213T1G and SMUN2213T1G. Verify pinout compatibility and electrical parameters before substitution.

SMUN2213T1GSMUN2213T1G
$0.17
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