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The SMUN2213T1G is a Bias Resistor Transistor (BRT) from onsemi, featuring an NPN transistor integrated with a monolithic bias resistor network. It replaces discrete components to simplify circuit design and reduce board space. The device operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. Electrical characteristics include a typical DC current gain of 140 at 5.0 mA and a saturation voltage of 0.25 Vdc at 10 mA. The unit incorporates a series base resistor of 47 kOhms and a base-emitter resistor of 47 kOhms, maintaining a ratio of 1.0. It functions reliably across a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Ensure compliance with RoHS standards and lead-free requirements as specified in the manufacturer's datasheet. Confirm that the selected variant meets all necessary automotive qualification criteria if applicable to the target application environment.
Select this component when a compact solution for NPN switching with built-in biasing is required. Consider the thermal dissipation limits relative to ambient operating conditions. Evaluate the input resistance values against the driving source capabilities to ensure proper logic level interfacing and adequate base drive current for the intended load.
This part belongs to the MUN2213 series of digital transistors manufactured by onsemi. It shares functional similarities with other BRT devices like the MUN2216T1G but differs in internal resistor values. The SC-59 package provides a small form factor suitable for surface-mount assembly in space-constrained electronic designs.
Direct substitutes include MUN2213T1G and SMUN2213T1G. Verify pinout compatibility and electrical parameters before substitution.