SMUN2214T1G

SMUN2214T1G

$0.17
  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-

SKU:bd247cc16d49 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:230 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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SMUN2214T1G

Overview

The SMUN2214T1G is a single NPN Digital Transistor (BRT) manufactured by onsemi, designed to replace discrete transistor and resistor networks. It integrates a single NPN bipolar junction transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor within an SOT-23-3 package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 10 kOhms and a typical resistor ratio of 0.21. It operates within a temperature range of -55°C to +150°C and holds AEC-Q100 qualification for automotive applications.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network to eliminate external components
  • Reduces printed circuit board space and simplifies circuit design through component consolidation
  • Qualified for automotive applications under the AEC-Q100 standard

Applications

  • Automotive electronic systems requiring qualified digital switching components
  • General-purpose switching applications in consumer electronics
  • Interface circuits replacing discrete bias resistor networks

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Confirm that the AEC-Q100 qualification status aligns with project requirements. Cross-reference the datasheet revision date to ensure compatibility with current design standards. Validate pinout configurations against the target PCB footprint before procurement.

Selection Notes

Select this component when a single NPN digital transistor with a 10 kOhm base resistor is required. Ensure the 50 V collector-emitter voltage rating exceeds the maximum circuit operating voltage. Verify that the 100 mA continuous current capability meets load requirements. Consider the SOT-23-3 package dimensions for spatial constraints. Compare the internal resistor ratio against alternative models if specific biasing characteristics are critical.

Part Context

This part belongs to the MUN2214L family of digital transistors from onsemi. These devices are engineered to simplify biasing designs by integrating resistors directly onto the silicon die. The family offers various resistor ratios and transistor polarities to accommodate different logic interface needs while maintaining a compact surface-mount form factor suitable for high-density assemblies.

Replacement Considerations

The MUN2214T1G serves as a direct functional equivalent with identical electrical parameters but utilizes an SC-59 package instead of SOT-23-3. Designers must verify pinout compatibility and physical footprint differences before substitution. Other family members like SMUN2213T1G offer different resistor values and require circuit redesign.

SMUN2214T1GSMUN2214T1G
$0.17
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