SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SMUN2216T1G is a Bias Resistor Transistor (BRT) from onsemi, featuring an integrated NPN transistor and monolithic bias resistor network. It replaces discrete components to simplify circuit design. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and typical input resistors R1=4.7 kOhms with a ratio of 1. The device operates within a temperature range of -55°C to +150°C and is housed in the SC-59 package.
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Ensure compliance with RoHS standards and lead-free requirements. Confirm that the selected variant meets the necessary automotive qualification standards if applicable to the target application environment.
Select this component when a compact solution for NPN switching with built-in biasing is required. Consider the SC-59 package dimensions and thermal dissipation characteristics relative to the PCB layout. Verify that the 50 V collector-emitter rating and 100 mA current capacity align with the circuit's maximum operating conditions.
This part belongs to the MUN2216 series of digital transistors manufactured by onsemi. It is functionally equivalent to other BRTs in the DTC143T family but utilizes the SC-59 surface-mount package. The device integrates both the transistor and bias resistors into a single monolithic structure.
SMUN2216LT1G