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The SMUN2240T1G is a Bipolar Junction Transistor (BJT) configured as a Pre-Biased Digital Transistor with built-in bias resistors. Manufactured by onsemi, this NPN device integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor into a single package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The component utilizes an SC-70 (SOT-323) surface-mount package. Key electrical specifications include a minimum DC current gain (hFE) of 80 at specified test conditions. The internal bias resistor ratio is defined by R1 = 10 kΩ and R2 = 47 kΩ.
Verify the specific ordering suffix against the manufacturer's current datasheet to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for automotive qualification status if the application requires AEC-Q101 certification. Confirm moisture sensitivity level handling procedures during assembly.
Select this component when a compact NPN switch with integrated biasing is needed. Compare the 10k/47k resistor ratio against other MUN series variants like the MUN2236T1G or MUN2214T3G to match specific input impedance requirements. Verify that the 50V rating and 100mA current capacity meet the load demands of the target circuit design.
This part belongs to the MUN series of Digital Transistors (BRT) from onsemi. These devices are designed to simplify digital logic interfaces by combining a transistor and bias resistors. The series offers various resistor ratios and configurations to accommodate different drive requirements while maintaining a small footprint suitable for modern surface-mount assemblies.
Direct substitutes within the same family include the MUN2240LT1G (tape and reel variant). Cross-brand equivalents should be verified for pin compatibility and identical resistor values (R1=10k, R2=47k) to ensure functional parity without redesigning the surrounding circuitry.