SMUN5111T1G

SMUN5111T1G

$0.16
  • Description:TRANS PREBIAS PNP 50V SC70-3
  • Series:-

SKU:55e4718363ac Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SC70-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:202 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3 (SOT323)

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SMUN5111T1G

Overview

The SMUN5111T1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates within a collector-emitter voltage range of up to 50 Vdc and supports continuous collector currents of 100 mAdc. The device features an input forward voltage rating of 40 Vdc and reverse voltage of 10 Vdc. Electrical characteristics include a typical DC current gain of 60 at 5 mA and 10 V, and a maximum collector-emitter saturation voltage of 0.25 V at 10 mA. The internal resistors are nominally 10 kOhms each, with a ratio of 1.0.

Feature Summary

  • Integrates a PNP transistor with a monolithic bias network to replace discrete components
  • Reduces board space and component count in circuit designs
  • Available in SC-70/SOT-323 surface-mount package

Applications

  • General-purpose switching applications requiring simplified bias networks
  • Replacement for discrete transistor and resistor combinations in digital logic circuits
  • Space-constrained electronic assemblies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and Pb-free designation as indicated in the manufacturer's datasheet before procurement. Ensure the selected variant matches the required thermal dissipation characteristics for the intended operating environment.

Selection Notes

Select this component when a compact PNP solution with integrated biasing is required. Verify that the 50 V collector-emitter voltage rating meets the system requirements. Consider the SC-70/SOT-323 package dimensions for PCB layout constraints. Evaluate thermal derating curves if operation exceeds standard ambient temperature limits.

Part Context

This part belongs to the DTA114E/D Digital Transistors family, which includes variants like MUN2111, MUN5111, and DTA114EE. These devices share the core function of combining a transistor with bias resistors but differ in packaging and specific electrical tolerances. The SMUN5111T1G specifically utilizes the SC-70/SOT-323 form factor.

Replacement Considerations

Direct substitutes within the same family include MUN5111T1G and SMUN5111T1G, which share identical electrical characteristics and pinouts. Other packages such as SOT-23 or SC-59 may require schematic and layout modifications due to pin configuration differences.

SMUN5111T1GSMUN5111T1G
$0.16
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