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The SMUN5111T1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates within a collector-emitter voltage range of up to 50 Vdc and supports continuous collector currents of 100 mAdc. The device features an input forward voltage rating of 40 Vdc and reverse voltage of 10 Vdc. Electrical characteristics include a typical DC current gain of 60 at 5 mA and 10 V, and a maximum collector-emitter saturation voltage of 0.25 V at 10 mA. The internal resistors are nominally 10 kOhms each, with a ratio of 1.0.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and Pb-free designation as indicated in the manufacturer's datasheet before procurement. Ensure the selected variant matches the required thermal dissipation characteristics for the intended operating environment.
Select this component when a compact PNP solution with integrated biasing is required. Verify that the 50 V collector-emitter voltage rating meets the system requirements. Consider the SC-70/SOT-323 package dimensions for PCB layout constraints. Evaluate thermal derating curves if operation exceeds standard ambient temperature limits.
This part belongs to the DTA114E/D Digital Transistors family, which includes variants like MUN2111, MUN5111, and DTA114EE. These devices share the core function of combining a transistor with bias resistors but differ in packaging and specific electrical tolerances. The SMUN5111T1G specifically utilizes the SC-70/SOT-323 form factor.
Direct substitutes within the same family include MUN5111T1G and SMUN5111T1G, which share identical electrical characteristics and pinouts. Other packages such as SOT-23 or SC-59 may require schematic and layout modifications due to pin configuration differences.