SMUN5113T1G

Overview

The SMUN5113T1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi, designed to replace discrete transistors and external biasing networks. It integrates a monolithic bias network consisting of two resistors within a compact SOT-323 (SC-70-3) surface-mount package. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. Key electrical parameters include a typical base resistor (R1) value of 4.7 kOhms and an emitter resistor (R2) of 4.7 kOhms. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive applications.

Feature Summary

• Integrates a single NPN transistor with a monolithic dual-resistor bias network to simplify circuit design.
• Reduces printed circuit board space and component count by eliminating discrete biasing components.
• Qualified for automotive applications under the AEC-Q101 standard with PPAP capability.

Applications

• Automotive electronic systems requiring qualified digital transistors
• General-purpose switching circuits in consumer electronics
• Logic level translation and buffer interfaces

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure that any prefix variations align with the required automotive qualification status. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current availability and lead times before finalizing procurement plans.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for space-constrained designs. Verify that the 50 V collector-emitter voltage and 100 mA current ratings exceed the maximum operational limits of the target application. Confirm compatibility with the intended PCB footprint for the SC-70-3 package during the layout phase.

Part Context

This component belongs to the MUN5113 series of Bias Resistor Transistors from onsemi. These devices are engineered to provide a cost-effective and space-saving alternative to traditional discrete transistor configurations. The series is widely utilized in applications where simplified biasing networks and reduced assembly complexity are prioritized.

Replacement Considerations

Compatible equivalents may include other NPN BRTs with identical 4.7 kOhm/4.7 kOhm resistor ratios and 50 V ratings in SOT-323 packages. Verify pinout compatibility and thermal characteristics before substitution.