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The SMUN5114T1G is a single pre-biased PNP digital transistor manufactured by onsemi, housed in an SOT-323 (SC-70-3) surface-mount package. It integrates internal base and emitter resistors to simplify circuit design. Key electrical specifications include a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA. The device features a typical base resistor value of 10 kOhms and an emitter resistor of 47 kOhms. It operates within a temperature range of -55°C to +150°C and is qualified under the AEC-Q101 automotive standard.
Verify the specific ordering suffix against official documentation, as variations may exist between T1 and T1G designations regarding manufacturing origin or compliance details. Confirm availability through authorized distributors and check lead times directly with suppliers. Ensure the procurement channel provides valid traceability documents and authenticity guarantees for automotive-grade components.
Select this component when a single PNP digital transistor with integrated biasing is required in an SOT-323 package. Verify that the 50 V voltage rating and 100 mA current capacity meet the circuit requirements. Consider the AEC-Q101 qualification if the application demands automotive reliability standards. Compare internal resistor values with other MUN5114 variants to ensure compatibility with existing logic levels.
This part belongs to the MUN5114 series of pre-biased transistors from onsemi. It shares functional similarities with other members like SMUN5114DW1T1G but differs in configuration and package type. The series is designed to replace discrete resistor-transistor combinations, offering a compact solution for switching and amplification tasks in modern electronic systems.
SMUN5114T1G is a verified equivalent variant with identical electrical characteristics and pinout. Other MUN5114 family members may serve as alternatives if package and configuration differences are acceptable.