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The SMUN5114T1G is a PNP Bias Resistor Transistor (BRT) from the MUN5114 series, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device features a typical input resistance of 10 kOhms and a resistor ratio of 0.21. Packaged in an SC-70/SOT-323 format, it offers a maximum power dissipation of 202 mW at 25°C and functions across a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Ensure compliance with RoHS directives and lead-free specifications as stated in the datasheet. Confirm that the selected variant meets the required AEC-Q101 qualification if intended for automotive use. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity and traceability.
Select this component when a compact solution is needed to drive PNP loads with integrated biasing. The SOT-323 package suits space-constrained designs. Evaluate thermal derating curves for high-temperature environments. Compare against other BRT families like DTA114Y or MMUN2114L if different packaging or polarity is required.
This device belongs to the MUN5114 family of digital transistors manufactured by onsemi. It shares electrical characteristics with variants such as MUN5114T1G and SMUN5114T3G, differing primarily in shipping quantities and specific marking codes. The family is designed to streamline analog and digital interface circuits by consolidating biasing elements.
Direct functional equivalents include MUN5114T1G and SMUN5114T3G within the same series. Other compatible devices from the same datasheet include DTA114YE and NSBA114YF3, though package differences must be accounted for during substitution.