SMUN5114T3G

Overview

The SMUN5114T3G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device features an input forward voltage of 40 Vdc and reverse voltage of 6 Vdc. Electrical characteristics include a DC current gain (hFE) minimum of 80 at 5.0 mA and 10 V, and a collector-emitter saturation voltage maximum of 0.25 Vdc at 10 mA. The internal resistors are typically 10 kOhms for R1 and 47 kOhms for R2, yielding a ratio of 0.21. It is housed in the SC-70/SOT-323 package and qualified under AEC-Q101 standards.

Feature Summary

• Integrates a PNP transistor with a monolithic bias resistor network to replace discrete components
• Simplifies circuit design by reducing board space and component count
• Qualified for automotive applications requiring unique site and control change requirements

Applications

• Automotive electronic systems requiring AEC-Q101 qualification
• General-purpose switching circuits utilizing pre-biased configurations
• Applications necessitating reduced bill-of-materials through integrated bias networks

Procurement Notes

Verify the specific ordering suffix 'T3G' corresponds to the 10,000-unit tape and reel shipping configuration in the SC-70/SOT-323 package. Confirm that the required automotive compliance aligns with the AEC-Q101 qualification status documented for this device family. Ensure the procurement specifications match the Pb-Free and RoHS compliant manufacturing standards indicated in the datasheet.

Selection Notes

Select the SMUN5114T3G when a PNP digital transistor with integrated biasing is required for space-constrained designs. The device offers a typical input resistance of 10 kOhms and a fixed resistor ratio of 0.21. Consider the thermal dissipation limits of the SC-70/SOT-323 package, which provides a total device dissipation of 202 mW at 25°C ambient temperature. Verify that the 50 V collector-emitter voltage rating meets the system's operational requirements.

Part Context

The SMUN5114T3G belongs to the MUN5114 series of digital transistors manufactured by onsemi. This series is designed to simplify circuit design by replacing individual transistors and external bias resistors with a single integrated device. The part shares electrical characteristics and pin configurations with other variants in the DTA114Y and MUN2114 families, differing primarily in packaging and shipping quantities.

Replacement Considerations

Direct replacements within the same package and electrical specification include the SMUN5114T1G, which utilizes the same SC-70/SOT-323 package but differs in shipping quantity (3,000 units per tape and reel). Other compatible devices in the series include the MUN5114T1G.