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The SMUN5115T1G is a single NPN digital transistor manufactured by onsemi, housed in an SOT-323 (SC-70) surface-mount package. It integrates a built-in bias resistor network with a typical base resistance of 10 kOhms and a resistor ratio of 0.21. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. It operates within a temperature range of -55°C to +150°C and meets AEC-Q100 automotive qualification standards.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent production change notices that may affect pinout or material composition before finalizing procurement orders.
Select this component when a compact NPN switch with integrated biasing is required in space-constrained designs. Confirm that the 10 kOhm internal resistance aligns with the driving source impedance and desired switching speed requirements compared to discrete transistor solutions.
This part belongs to the MUN5115 series of pre-biased transistors from onsemi. It serves as a compact alternative to discrete BJT and resistor combinations, offering reduced board space and assembly costs while maintaining consistent electrical characteristics across manufacturing batches.
Direct substitutes include the MUN5115T1G without the 'S' prefix if package compatibility is verified, or other NPN digital transistors with identical 50V/100mA ratings and SOT-323 packaging. Verify resistor ratios and hFE values match original design constraints.