SMUN5115T1G

SMUN5115T1G

$0.16
  • Description:TRANS PREBIAS PNP 50V SC70-3
  • Series:-

SKU:5004ff42ff32 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SC70-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:202 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3 (SOT323)

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SMUN5115T1G

Overview

The SMUN5115T1G is a single NPN digital transistor manufactured by onsemi, housed in an SOT-323 (SC-70) surface-mount package. It integrates a built-in bias resistor network with a typical base resistance of 10 kOhms and a resistor ratio of 0.21. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. It operates within a temperature range of -55°C to +150°C and meets AEC-Q100 automotive qualification standards.

Feature Summary

  • Integrates a single NPN bipolar junction transistor with a built-in base bias resistor for simplified circuit design.
  • Optimized for high-speed switching applications through integrated pre-biasing that reduces external component count.
  • Automotive-grade reliability ensured by AEC-Q100 qualification for robust performance in demanding environments.

Applications

  • Switching circuits in automotive electronic control units
  • Level shifting and buffer stages in portable consumer devices
  • General-purpose logic interface and driver applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent production change notices that may affect pinout or material composition before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN switch with integrated biasing is required in space-constrained designs. Confirm that the 10 kOhm internal resistance aligns with the driving source impedance and desired switching speed requirements compared to discrete transistor solutions.

Part Context

This part belongs to the MUN5115 series of pre-biased transistors from onsemi. It serves as a compact alternative to discrete BJT and resistor combinations, offering reduced board space and assembly costs while maintaining consistent electrical characteristics across manufacturing batches.

Replacement Considerations

Direct substitutes include the MUN5115T1G without the 'S' prefix if package compatibility is verified, or other NPN digital transistors with identical 50V/100mA ratings and SOT-323 packaging. Verify resistor ratios and hFE values match original design constraints.

SMUN5115T1GSMUN5115T1G
$0.16
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