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Product Detailed Parameters
- Description：TRANS PREBIAS PNP
- Series：*
- Mfr：onsemi
- Package：Bulk
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The SMUN5116T1 is a single NPN digital transistor manufactured by onsemi, belonging to the MUN5116 series. It integrates a monolithic bias resistor network consisting of a base resistor and a base-emitter resistor with an NPN bipolar junction transistor. The device is designed for surface mount installation in SC-70-3 (SOT-323) packages. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a typical input resistance of 4.7 kOhms. The component supports a minimum DC current gain (hfe) of 160 and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components and external biasing circuits.
- Designed for surface mount technology using compact SC-70-3 packaging to optimize board space.
- Provides high DC current gain suitable for switching and amplification applications.
Applications
- General-purpose switching circuits
- Driver stages for logic interfaces
- Biasing networks in portable electronic devices
Procurement Notes
Verify the specific suffix 'T1' against the manufacturer's official datasheet to confirm package type and tape/reel specifications. Ensure compliance with RoHS directives if required for the target assembly process. Cross-reference the part number with authorized distributors to confirm current production status and availability constraints.
Selection Notes
Select this component when a compact NPN digital transistor with integrated biasing is required. Compare the 4.7 kOhm base resistance value against circuit requirements to ensure proper drive current levels. Verify that the 50 V collector-emitter voltage rating exceeds the maximum operating voltage of the application.
Part Context
This part belongs to the MUN5116 family of Bias Resistor Transistors (BRTs). These devices are engineered to simplify circuit design by combining a transistor and resistors into a single package. The family typically includes complementary PNP variants and dual configurations for different integration needs.
Replacement Considerations
Direct substitutes may include other NPN digital transistors from onsemi with identical pinouts and electrical ratings, such as the MUN5116DW1T1G. Verify pin compatibility and thermal characteristics before substitution.
