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The SMUN5133T1G-M02 is a single pre-biased PNP bipolar junction transistor (BJT) manufactured by onsemi. It integrates internal biasing resistors within an SC-70-3 surface-mount package. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation rating of 202 mW. It operates across a temperature range from -55°C to +150°C. The component features a minimum DC current gain (hFE) of 80 and includes typical input resistance values for simplified circuit design.
Verify the specific M02 suffix against the manufacturer's official documentation to confirm exact electrical tolerances and marking codes. Ensure that the SC-70-3 package dimensions align with the target PCB footprint. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement specifications.
Select this component when a single PNP digital transistor with integrated biasing is required for space-limited designs. The SC-70-3 package offers a small form factor compared to larger alternatives. Consider the 50V voltage rating and 100mA current limit to ensure adequate headroom for the intended load conditions and operating environment.
This part belongs to the MUN5133 series of pre-biased transistors from onsemi. These devices combine a BJT with internal resistors to reduce external component count. The series is designed for high-volume manufacturing and provides consistent performance characteristics for standard switching applications across various electronic product categories.
Public confirmed substitute part numbers are not available in the provided source material.