SMUN5211T1G

SMUN5211T1G

$0.16
  • Description:TRANS PREBIAS NPN 50V SC70-3
  • Series:-

SKU:aed13ae2dc39 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SC70-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:202 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3 (SOT323)

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SMUN5211T1G

Overview

The SMUN5211T1G is an NPN Bias Resistor Transistor (BRT) manufactured by onsemi, housed in a compact SOT-323 (SC-70) surface-mount package. This single digital transistor integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor to simplify circuit design. It features a maximum collector-emitter voltage (VCEO) of 50 V and a maximum DC collector current (IC) of 100 mA. The device has a typical input resistance of 22 kΩ and supports a maximum power dissipation of 310 mW. It operates at temperatures up to +150 °C and contains one chip element within its three-pin configuration.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network comprising series base and base-emitter resistors to replace discrete components.
  • Designed for low-power surface mount applications where board space is limited, reducing overall component count.
  • Provides simplified circuit design capabilities by eliminating the need for external biasing resistors.

Applications

  • Switching applications in portable consumer electronics
  • Driver circuits for logic outputs
  • General-purpose switching in high-density PCB designs

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part matches the exact electrical characteristics required for the target application, as variations may exist within the product family. Cross-reference the manufacturer's latest datasheet for any updates regarding pinout or thermal ratings before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN switching solution with integrated biasing is required. Ensure the application voltage does not exceed the 50 V collector-emitter rating and the current load remains within the 100 mA limit. Consider the SOT-323 package dimensions if space constraints are critical. Verify that the internal resistor values align with the driving source requirements for the specific logic interface being used.

Part Context

This component belongs to the MUN5211 series of digital transistors from onsemi. These devices are engineered to consolidate multiple discrete parts into a single surface-mount package. The series is commonly utilized in modern electronic designs to minimize footprint and assembly complexity while maintaining reliable switching performance for standard logic-level control signals.

Replacement Considerations

Compatible substitutes include other NPN BRTs with similar 50 V ratings and comparable internal resistor networks, such as the MUN5211DW1T1G for dual configurations or equivalent offerings from other manufacturers like NXP or Diodes Inc., provided pinouts and electrical limits match.

SMUN5211T1GSMUN5211T1G
$0.16
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