SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SMUN5211T3G is a Bias Resistor Transistor (BRT) manufactured by onsemi, featuring two NPN transistors integrated with monolithic bias resistor networks within a single SOT-363 surface-mount package. This component provides a DC collector current of 100 mA and a maximum collector-emitter voltage of 50 V. Each transistor includes an internal base resistor (R1) of 10 kΩ and a base-emitter resistor (R2) of 10 kΩ. The device operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 250 mW.
Verify the specific ordering suffix against official manufacturer documentation to confirm pinout configuration and packaging details. Ensure compliance with RoHS directives and material declarations relevant to the target region. Cross-reference the full part number including the 'G' suffix for lead-free specifications when sourcing from authorized distributors.
Select this component when space-constrained designs require dual switching elements with fixed biasing. The 10kΩ/10kΩ resistor ratio offers standard biasing characteristics. Verify that the 100mA current rating meets load requirements and that the SOT-363 footprint aligns with PCB layout constraints compared to alternative packages like SC-70 or SOT-23.
This device belongs to the MUN5211 series of dual Bias Resistor Transistors designed for high-density surface mount applications. It consolidates two NPN switches and four resistors into one compact package, significantly reducing component count and assembly time compared to using discrete transistors and external biasing networks.
Direct functional substitutes include the MUN5211DW1T1G and MUN5211T1G, which share identical electrical characteristics and pin configurations within the SOT-363 package family.