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The SMUN5212T1G-M02 is a dual NPN digital transistor manufactured by onsemi, distributed by Flip Electronics. It integrates two NPN bipolar junction transistors with built-in bias resistors in a compact SOT-363 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device features a typical input resistance of 22 kOhms with a resistor ratio of 1. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 187 mW. The minimum DC current gain (hFE) is specified at 60.
Verify authenticity through authorized channels when sourcing from distributors like Flip Electronics. Confirm the M02 suffix matches specific quality or traceability requirements. Check RoHS compliance status against current regulatory standards. Ensure storage conditions maintain component integrity prior to assembly.
Select this component for designs requiring dual NPN switching with integrated base resistors. The SOT-363 package offers space efficiency compared to discrete solutions. Verify that the 50 V voltage rating and 100 mA current capacity meet circuit demands. Consider the 22 kOhm input resistance for base drive calculations.
This part belongs to the MUN5212DW1 series of digital transistors from onsemi. It is functionally equivalent to other MUN5212 variants but may carry specific manufacturing or quality lot identifiers indicated by the suffix. The component is widely used in embedded systems requiring compact switching elements.
Direct substitutes include the standard MUN5212DW1T1G. Other compatible parts from different manufacturers must match the NPN configuration, 50 V rating, and SOT-363 footprint. Verify pinout compatibility before substitution.