SMUN5212T1G-M02

SMUN5212T1G-M02

$0.03
  • Description:Pre-Biased Bipolar Transistor (B
  • Series:-

SKU:d9341cc1b33b Category: Brand:

  
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Product Detailed Parameters

  • Description:Pre-Biased Bipolar Transistor (B
  • Series:-
  • Mfr:Flip Electronics
  • Package:Bulk
  • Resistors Included:-
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Resistor - Base (R1):-
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:-
  • Power - Max:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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SMUN5212T1G-M02

Overview

The SMUN5212T1G-M02 is a dual NPN digital transistor manufactured by onsemi, distributed by Flip Electronics. It integrates two NPN bipolar junction transistors with built-in bias resistors in a compact SOT-363 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device features a typical input resistance of 22 kOhms with a resistor ratio of 1. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 187 mW. The minimum DC current gain (hFE) is specified at 60.

Feature Summary

  • Integrates dual NPN transistors with internal biasing resistors for simplified circuit design
  • Provides high-density packaging in a six-lead SOT-363 surface-mount configuration
  • Supports wide operating temperature ranges suitable for industrial applications

Applications

  • Switching applications in consumer electronics
  • Driver circuits for logic interfaces
  • General-purpose switching in portable devices

Procurement Notes

Verify authenticity through authorized channels when sourcing from distributors like Flip Electronics. Confirm the M02 suffix matches specific quality or traceability requirements. Check RoHS compliance status against current regulatory standards. Ensure storage conditions maintain component integrity prior to assembly.

Selection Notes

Select this component for designs requiring dual NPN switching with integrated base resistors. The SOT-363 package offers space efficiency compared to discrete solutions. Verify that the 50 V voltage rating and 100 mA current capacity meet circuit demands. Consider the 22 kOhm input resistance for base drive calculations.

Part Context

This part belongs to the MUN5212DW1 series of digital transistors from onsemi. It is functionally equivalent to other MUN5212 variants but may carry specific manufacturing or quality lot identifiers indicated by the suffix. The component is widely used in embedded systems requiring compact switching elements.

Replacement Considerations

Direct substitutes include the standard MUN5212DW1T1G. Other compatible parts from different manufacturers must match the NPN configuration, 50 V rating, and SOT-363 footprint. Verify pinout compatibility before substitution.

SMUN5212T1G-M02SMUN5212T1G-M02
$0.03
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