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The SMUN5212T1G is an NPN digital transistor manufactured by onsemi, housed in a SOT-323 (SC-70) surface-mount package. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device integrates a monolithic bias network with a typical input resistance of 22 kΩ and a typical resistor ratio of 1. It operates within a temperature range up to +150 °C and has a maximum power dissipation of 310 mW.
Verify the specific suffix T1G against official onsemi documentation to confirm packaging details and compliance status. Ensure the ordering part number matches the required tape and reel specifications for automated assembly processes. Cross-reference the manufacturer's latest datasheet for any updates regarding material declarations or manufacturing site changes prior to procurement.
Select this component when a single NPN digital transistor with integrated biasing is required in a SOT-323 package. Confirm that the 22 kΩ typical input resistance aligns with the target circuit's drive requirements. Verify that the 50 V collector-emitter voltage and 100 mA current ratings exceed the maximum operational loads in the application environment.
This component belongs to the MUN5212 series of Bias Resistor Transistors (BRT). These devices combine a transistor with internal resistors to reduce component count. The SMUN5212T1G variant specifically utilizes the SOT-323 package, distinguishing it from dual configurations like the MUN5212DW1T1G found in SOT-363 packages.
Publicly confirmed substitute part numbers are not available in the provided source data. Evaluate other onsemi BRT devices in the SOT-323 package with matching electrical parameters if direct substitution is necessary.