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The SMUN5213T1G is an NPN Bias Resistor Transistor (BRT) from onsemi, housed in a SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 Vdc, continuous collector current (IC) of 100 mAdc, and total device dissipation (PD) of 202 mW at 25°C. The typical input resistors R1 and R2 are both 47 kΩ, yielding a resistor ratio of 1.0. The DC current gain (hFE) has a minimum value of 80 at IC = 5.0 mA and VCE = 10 V.
Verify the specific ordering suffix 'T1G' corresponds to the SC-70/SOT-323 package and tape & reel shipping configuration as listed in the official datasheet. Confirm that the device meets Pb-Free and RoHS compliance requirements if applicable to the target assembly process. Ensure the marking code '8C' matches the received component for authenticity verification.
Select this component when a compact NPN digital transistor solution is required for space-constrained designs. The SC-70 package offers a small footprint suitable for high-density PCB layouts. Verify that the 50 V collector-emitter voltage and 100 mA continuous current ratings exceed the maximum operating conditions of the intended application circuit.
The SMUN5213T1G belongs to the DTC144E/BRT family published under document DTC144E/D. This series includes various packages such as SOT-23, SC-59, and SOT-723. The 'SMUN' prefix typically denotes the automotive or qualified variant within the broader MUN5213 product line, sharing identical electrical characteristics with the standard MUN5213T1G but potentially adhering to stricter site control requirements.
MUN5213T1G