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The SMUN5214T1G is a single PNP Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor with a PNP transistor in an SOT-323 package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Typical input resistance is 10 kOhms with a typical resistor ratio of 0.21. Minimum DC current gain (hFE) is 80 at 5 mA and 10 V. Power dissipation is rated at 202 mW, operating within a temperature range of -55°C to +150°C.
Verify the specific suffix T1G against the manufacturer's official datasheet to confirm packaging and qualification details. Ensure the ordering part number matches the required PNP configuration and SOT-323 footprint. Cross-reference the AEC-Q101 qualification status if automotive compliance is mandatory for the target application.
Select this component when a PNP digital transistor with integrated biasing is required in a compact SOT-323 package. Verify that the 50 V voltage rating and 100 mA current capacity meet circuit requirements. Confirm the 10 kOhm input resistance aligns with drive source capabilities. Consider the AEC-Q101 qualification if the application demands automotive-grade reliability.
The SMUN5214T1G belongs to the MUN5214 series of Bias Resistor Transistors from onsemi. This series consolidates a transistor and its bias resistors into a single surface-mount device. The SOT-323 package provides a small form factor suitable for high-density PCB layouts. The integration simplifies circuit design by eliminating external bias components.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by matching electrical parameters such as VCEO, IC, R1, and package type before substitution.