SMUN5232T1G

$0.16

Description：TRANS PREBIAS NPN 50V SC70-3
Series：-

SKU:3cfd1db5e17b Category: Single, Pre-Biased Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V SC70-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：4.7 kOhms
Resistor - Emitter Base (R2)：4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：230 mW
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70-3 (SOT323)

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SMUN5232T1G

Overview

The SMUN5232T1G is a Bias Resistor Transistor (BRT) manufactured by onsemi, designed to replace discrete transistor and resistor networks. It integrates an NPN silicon transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This component operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 4.7 kOhms with a resistor ratio of 1. It is housed in the SC-70 surface-mount package, suitable for low-power applications where board space is limited.

Feature Summary

Integrates an NPN transistor with a dual-resistor bias network to simplify circuit design
Reduces printed circuit board footprint by eliminating external bias components
Provides consistent switching performance through monolithic resistor integration

Applications

Low-power surface mount digital logic circuits
Battery-powered portable devices requiring minimal board space
General-purpose switching applications in consumer electronics

Procurement Notes

Verify the specific suffix against official documentation to confirm pinout and electrical characteristics. Ensure the selected variant matches the required thermal management and mounting specifications for the target application environment.

Selection Notes

Select this component when a compact solution for driving loads or interfacing logic levels is required. Consider the 100 mA collector current limit and 50 V breakdown voltage to ensure compatibility with the load requirements and supply voltages of the system design.

Part Context

This part belongs to the MUN/SMUN series of Bias Resistor Transistors from onsemi. These devices are engineered to consolidate multiple discrete components into a single surface-mount package, facilitating automated assembly and reducing overall bill-of-materials complexity for high-volume manufacturing.