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The SMUN5235T1G is a Bias Resistor Transistor (BRT) manufactured by onsemi, featuring a dual NPN configuration housed in an SOT-363 surface-mount package. This component integrates two monolithic bias networks, each comprising a series base resistor and a base-emitter resistor, designed to replace discrete transistor and resistor combinations. Key electrical parameters include a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The typical input resistance for the integrated network is 4.7 kOhms, with a standard resistor ratio of 1:1. The device supports a minimum DC current gain (hFE) of 80 and operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 187 mW.
Verify the specific suffix against official documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with automated pick-and-place equipment regarding the SOT-363 footprint. Confirm RoHS compliance status through the manufacturer's latest datasheet revision before finalizing procurement orders.
Select this component when a dual NPN BRT configuration is required for space-constrained designs. Verify that the 4.7 kOhm internal resistance aligns with the target logic interface levels. Ensure the 50 V voltage rating exceeds the maximum operating voltage of the application circuit to maintain reliability margins.
This part belongs to the MUN5235 family of dual Bias Resistor Transistors from onsemi. It shares functional similarities with other SOT-363 packaged BRTs but is distinguished by its specific NPN polarity and 4.7 kOhm resistor values. It serves as a direct replacement for discrete resistor-transistor networks in low-power digital logic circuits.
Cross-reference with SMUN5235DW1T1G for identical electrical characteristics in alternative packaging formats. Verify pinout compatibility when substituting with other dual NPN BRTs from different manufacturers to ensure correct signal routing.