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The SNST3904DXV6T1G is a dual NPN silicon small-signal bipolar junction transistor manufactured by onsemi. It features a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 40 V. The device utilizes an SOT-563-6 surface-mount package with six pins. Key electrical specifications include a collector-base voltage of 60 V, an emitter-base voltage of 6 V, and a minimum DC current gain (hFE) of 40. The component supports a maximum power dissipation of 150 mW and operates within a temperature range from -55°C to +150°C.
Verify the exact part number suffix against official onsemi documentation to confirm package type and tape/reel specifications. Ensure compatibility with standard surface-mount assembly processes. Confirm that the dual NPN configuration meets the specific circuit requirements before procurement. Check for any recent product change notices regarding manufacturing updates or pinout adjustments.
Select this component when a dual NPN transistor is required in a compact surface-mount footprint. It serves as a direct replacement for single NPN devices where two transistors are needed in one package. Consider the 40 V voltage rating and 200 mA current limit for appropriate load handling. Evaluate the thermal dissipation constraints relative to the PCB layout and ambient operating conditions.
This device belongs to the NST/NSV3904 series, which are spin-offs of popular three-leaded SOT-23/SOT-323 devices. The dual configuration allows for space-saving designs in portable electronics and consumer appliances. It provides matched characteristics between the two internal transistors, ensuring consistent performance in differential or push-pull configurations.
Public confirmed substitute part numbers: MBT3904DW1T1G, MBT3904DW1T3G, NST3904DP6T5G.