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The SNST3904DXV6T5G is a dual NPN bipolar junction transistor array manufactured by onsemi. It is housed in a SOT-563 surface-mount package with three pins per transistor configuration. The device supports a maximum collector current of 200 mA and a collector-emitter voltage of 40 V. Key electrical parameters include a collector-base voltage of 60 V, an emitter-base voltage of 6 V, and a transition frequency of 300 MHz. Power dissipation is rated at 500 mW, with a minimum DC current gain of 30. The component operates within a temperature range of -55°C to 150°C.
Verify the specific suffix T5G against procurement requirements to ensure correct tape-and-reel packaging quantity and orientation. Confirm that the SOT-563 footprint matches the target PCB design guidelines. Cross-reference the manufacturer part number with official datasheets to validate the dual NPN configuration and electrical ratings before finalizing supply chain agreements.
Select this component when a dual NPN configuration is required in a minimal footprint SOT-563 package. It is appropriate for designs needing 200 mA continuous current handling and 40 V blocking voltage. Consider the 300 MHz frequency response for moderate-speed switching needs. Ensure the 500 mW power dissipation rating aligns with the thermal management strategy of the host system.
This part belongs to the family of small-signal dual transistors offered by onsemi. It serves as a compact alternative to discrete single transistors, reducing board space and assembly complexity. The SOT-563 package provides efficient thermal conduction relative to its size, supporting reliable operation in dense consumer electronic assemblies where multiple switching elements are necessary.
Public confirmed substitute part numbers: NST3904DXV6T1G, NSVT3904DXV6T1G, SNST3904DXV6T1G.