SNXH600B100H4Q2F2S1G-S

Overview

The SNXH600B100H4Q2F2S1G-S is a Si/SiC hybrid IGBT module featuring a triple-channel flying capacitor boost topology. It integrates three channels, each containing two 1000 V, 200 A IGBTs and two 1200 V, 60 A SiC diodes. The device utilizes trench field-stop technology to reduce switching losses. Key electrical ratings include a collector-emitter voltage of 1 kV, continuous collector current of 173 A at Tc=80°C, and power dissipation of 422 W. It operates within a temperature range of -40°C to +175°C.

Feature Summary

• Integrates silicon IGBTs with silicon carbide diodes for enhanced efficiency
• Employs trench field-stop technology to minimize switching energy loss
• Features a compact Q2Boost package design for high power density

Applications

• Solar inverters
• Uninterruptible power supply systems
• High-efficiency power conversion circuits

Procurement Notes

Verify the specific suffix 'S' against official onsemi documentation to confirm mechanical or thermal variations. Ensure compatibility with existing gate driver requirements and cooling solutions. Cross-reference the exact part number with authorized distributors to avoid counterfeit components. Confirm that the 56-PIM package dimensions match the target PCB layout constraints.

Selection Notes

Select this component when high-frequency operation and reduced thermal management complexity are required. The hybrid Si/SiC architecture offers superior performance compared to standard silicon modules. Consider the 175°C operating capability for robust industrial environments. Evaluate the trade-off between cost and the efficiency gains provided by the SiC diodes in the boost application.

Part Context

This module belongs to onsemi's NXH series of advanced power modules. It represents a shift towards hybrid technologies combining mature silicon IGBTs with wide-bandgap SiC devices. The Q2Boost packaging is designed specifically for boost converter applications, offering a balance between electrical performance and mechanical reliability in demanding power electronics systems.

Replacement Considerations

SNXH600B100H4Q2F2S1G