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The SP8J5TB is a dual P-channel power MOSFET from ROHM Semiconductor, designed for low-voltage drive applications. It features a drain-source voltage of -30V and a continuous drain current of -7A. The device exhibits a typical on-resistance (RDS(on)) of 0.025Ω at VGS = 4.5V and 0.03Ω at VGS = 4V. Total gate charge is specified at 25nC. Power dissipation reaches 2W in an SOP-8 package. The component is AEC-Q101 qualified for automotive reliability but is marked as non-recommended for new designs.
Verify the specific ordering suffix to confirm the exact package variant and tape/reel specifications. Confirm that the non-recommended status for new designs does not impact existing production schedules. Check RoHS compliance documentation for environmental standards. Ensure the supplier provides valid traceability records for automotive-grade components.
Select this component only for design maintenance or replacement purposes due to its non-recommended status for new developments. Evaluate the 4V drive requirement against available controller outputs. Compare the 0.025Ω RDS(on) performance with newer alternatives if thermal efficiency is critical. Verify that the -30V rating meets the system's maximum voltage stress requirements.
This part belongs to ROHM's automotive-qualified P-channel MOSFET family. It shares characteristics with other low-drive voltage devices but is distinct in its specific current and resistance ratings. The SOP-8 package offers a compact solution for surface-mount assembly. It serves as a legacy option within the broader portfolio of power switches.
The SP8J5FRATB is listed as the ordering part number variant. No direct cross-manufacturer substitutes are verified in the provided data. Designers should consult ROHM for updated recommendations suitable for new projects.