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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 3.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Rds On (Max) @ Id, Vgs：120mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：250pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SP8K31FRATB is a dual N-channel MOSFET from Rohm Semiconductor, designed for automotive applications with AEC-Q101 certification. It features a SOP8 package containing two independent N-channel devices. Key electrical parameters include a drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 3.5A. The typical on-resistance (R_DS(on)) is 0.033Ω at a gate drive voltage of 4V, ensuring low conduction losses in low-voltage driving scenarios. Total gate charge (Q_g) is typically 3.7nC, supporting efficient switching. The device supports surface mount mounting and operates within a storage temperature range of -55°C to 150°C.
Feature Summary
- Dual N-channel configuration integrated into a single compact SOP8 package
- Optimized for low gate drive voltage operation at 4V
- Automotive grade reliability certified under AEC-Q101 standards
Applications
- Automotive power switching circuits requiring low-side control
- Load management systems in vehicle electronics
- General purpose switching applications compatible with 4V logic levels
Procurement Notes
This component is designated as Not Recommended for New Designs (NRND). It is produced solely to support existing customers. Engineers initiating new projects should select the recommended replacement part SP8K31HZG instead. Verify supply status and lead times carefully before ordering, as availability may be limited to legacy stock replenishment.
Selection Notes
When selecting this component, note that it is an end-of-life or NRND item. For new designs, the SP8K31HZG is the direct pin-compatible replacement. While both share the same SOP8 package and basic ratings, the replacement has a higher R_DS(on) of 0.105Ω at 4V compared to the 0.033Ω of the SP8K31FRATB. Ensure the application can tolerate the increased on-resistance if migrating to the newer part.
Part Context
The SP8K31FRATB belongs to Rohm's automotive-grade MOSFET portfolio. It is specifically engineered for low-voltage drive applications in automotive environments. The 'TB' suffix indicates tape-and-reel packaging with a standard unit quantity. It serves as a legacy alternative to more recent generations of dual MOSFETs in the same series.
Replacement Considerations
The official replacement is SP8K31HZGTB. It maintains the same SOP8 package and pinout but exhibits different electrical characteristics, specifically a higher R_DS(on) at 4V drive voltage.
